Statistical evaluation of random telegraph signal amplitudes in sub-pm MOSFETs

Microelectronic Engineering

Volumn 36, Issue 1-4, 1997, Pages 223-226

  Mueller, H H ^a   Schulz, M ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC CURRENT DISTRIBUTION MEASUREMENT; INTERFACES (MATERIALS); PROBABILITY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SILICA; ELECTRIC CURRENT DISTRIBUTION; SEMICONDUCTOR DEVICE MODELS; STATISTICAL METHODS;

CHARGE TRAPPING; RANDOM TELEGRAPH SIGNALS (RTS); RANDOM TELEGRAPH SIGNAL AMPLITUDES;

MOSFET DEVICES;

EID: 0031150277     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(97)00053-1     Document Type: Article

References (4)

1. M. J. Kirton, M. J. Uren, S. Collins, M. Schulz, A. Karmann und K. Scheffer, Semicond. Sci. Technol. 4, 116 (1989), and H. H. Mueller and M. Schulz, J. Mat. Sci. 6, 65 (1995).
2. M. J. Kirton, M. J. Uren, S. Collins, M. Schulz, A. Karmann und K. Scheffer, Semicond. Sci. Technol. 4, 116 (1989), and H. H. Mueller and M. Schulz, J. Mat. Sci. 6, 65 (1995).
3. H. H. Mueller and M. Schulz, J. Appl. Phys. 75, 2970 (1994).
4. H. H. Mueller and M. Schulz, J. Appl. Phys. 79, 4178 (1996).