Study on time constants of random telegraph noise in gate leakage current through hot-carrier stress test

IEEE Electron Device Letters

Volumn 31, Issue 9, 2010, Pages 1029-1031

  Cho, Heung Jae ^a   Son, Younghwan ^a   Oh, Byoung Chan ^a   Lee, Sanghoon ^a   Lee, Jong Ho ^a   Park, Byung Gook ^a   Shin, Hyungcheol ^a  

^a Seoul National University   (South Korea)

Author keywords

Hot carrier stress; random telegraph noise (RTN); random telegraph noise in gate leakage current (Ig RTN); time constants

Indexed keywords

DRAIN EDGE; EMISSION TIME; ENERGY LEVEL; EXPERIMENTAL DATA; GATE-LEAKAGE CURRENT; HOT-CARRIER STRESS; LOW CURRENTS; MOSFETS; NMOSFETS; RANDOM TELEGRAPH NOISE; SINGLE OXIDES; THIN GATE OXIDES; TIME CONSTANTS;

CARRIER TELEGRAPH; ELECTRIC BREAKDOWN; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; MOSFET DEVICES;

LEAKAGE CURRENTS;

EID: 77956127409     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2053694     Document Type: Article

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