New statistical evaluation method for the variation of metal-oxide- semiconductor field-effect transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 4 B, 2007, Pages 2054-2057

  Watabe, Syunichi ^a   Sugawa, Shigetoshi ^a   Teramoto, Akinobu ^a   Ohmi, Tadahiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

MOSFET; Statistical evaluation; Threshold voltage; Variation

Indexed keywords

ANALOG CIRCUITS; ELECTRIC NETWORK ANALYSIS; LSI CIRCUITS; SEMICONDUCTOR DEVICE MODELS; STATISTICAL METHODS; THRESHOLD VOLTAGE;

STATISTICAL EVALUATION; STATISTICAL VARIATION; TEST CIRCUITS;

MOSFET DEVICES;

EID: 34547876924     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.2054     Document Type: Article

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