Characterization of oxide traps in 0.15 μm2 MOSFETs using random telegraph signals

Microelectronics Reliability

Volumn 40, Issue 11, 2000, Pages 1875-1881

  Amarasinghe, Nuditha Vibhavie ^a   Çelik Butler, Zeynep ^a   Vasina, Petr ^a  

^a Southern Methodist University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; COMPUTATIONAL COMPLEXITY; HOLE TRAPS; INTERFACES (MATERIALS); MOSFET DEVICES; RANDOM PROCESSES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

CHANNEL CARRIER DENSITY; OXIDE TRAPS; RANDOM TELEGRAPH SIGNALS (RTS);

MICROELECTRONICS;

EID: 0034325620     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2714(00)00089-5     Document Type: Article

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