Recent trends in bias temperature instability

Journal of Vacuum Science and Technology B

Volumn 29, Issue 1, 2011, Pages

  Kaczer, B ^a   Grasser, T ^b   Franco, J ^c   Toledano Luque, M ^c   Roussel, Ph J ^a   Cho, M ^a   Simoen, E ^a   Groeseneken, G ^c  

^a IMEC   (Belgium)

^b INSTITUTE FOR MICROELECTRONICS   (Austria)

^c UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DEFECTS; METALS; MOS DEVICES; OXIDE SEMICONDUCTORS; SEMICONDUCTOR DEVICE MANUFACTURE;

BIAS TEMPERATURE INSTABILITY; COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGIES; DEFECT PROPERTY; GATE-OXIDE DEFECTS; LOW-FREQUENCY NOISE; SCALED DEVICES; TECHNOLOGICAL SOLUTION; WEALTH OF INFORMATION;

FIELD EFFECT TRANSISTORS;

EID: 79551643313     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3521505     Document Type: Article

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