Single silicon vacancy-oxygen complex defect and variable retention time phenomenon in dynamic random access memories

Applied Physics Letters

Volumn 88, Issue 25, 2006, Pages

  Umeda, T ^a   Okonogi, K ^b   Ohyu, K ^b   Tsukada, S ^b   Hamada, K ^b   Fujieda, S ^c   Mochizuki, Y ^c  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b Elpida Memory Inc   (Japan)

^c NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DEFECTS; EMBEDDED SYSTEMS; MAGNETIC RESONANCE; OXYGEN; SEMICONDUCTING SILICON;

DRAIN-GATE BOUNDARY; RETENTION TIME PHENOMENON; VACANCY-OXYGEN COMPLEX DEFECTS;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 33745451611     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2213966     Document Type: Article

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