A method for locating the position of oxide traps responsible for random telegraph signals in submicron MOSFET's

IEEE Transactions on Electron Devices

Volumn 47, Issue 3, 2000, Pages 646-648

  Çelik Butler, Zeynep ^a   Vasina, Petr ^a   Amarasinghe, Nuditha Vibhavie ^a  

^a Southern Methodist University   (United States)

Author keywords

MOSFET; Noise; Oxide trap; Random telegraph signal

Indexed keywords

ELECTRIC POTENTIAL; ELECTRON EMISSION; ELECTRON TRAPS; GATES (TRANSISTOR); SEMICONDUCTOR DOPING; SPURIOUS SIGNAL NOISE; TELEGRAPH;

OXIDE TRAPS;

MOSFET DEVICES;

EID: 0033884180     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.824742     Document Type: Article

References (9)

1. K. S. Rails et al., "Discrete resistance switching in submicrometer silicon inversion layers: Individual interface traps and low-frequency (I//?) noise," Phys. Rev. Lett., vol. 52, p. 228, 1984.
2. M. J. Kirton and M. J. Uren, "Noise in solid-state microstructures: A new perspective on individual defects, interface states, and low-frequency noise," Adv. Phys., vol. 38, p. 367, 1989.
3. P. Fang, K. K. Hung, P. K. Ko, and C. Hu, "Hot-electron-induced traps studied through the random telegraph noise," IEEE Electron. Device Lett., vol. 12, p. 273, 1991.
4. Z. Shi, J. P. Mieville, and M. Dutoit, "Random telegraph signals in deep submicron n-MOSFET's," IEEE Tran. Electron Devices, vol. 41, p. 1161, 1994.
5. K. K. Hung, P. K. Ko, C. Hu, and Y. C. Cheng, "Random telegraph noise of deep-submicrometer MOSFET's," IEEE Electron Device Lett., vol. 11, p. 90, 1990.
6. E. Simoen, B. Dierickx, C. E. Claeys, and G. J. Declerck, "Explaining the amplitude of RTS noise in submicrometer MOSFET's,"/£££ Trans. Electron Devices, vol. 39, p. 422, 1992.
7. X. Ei, C. Barros, E. P. Vandamme, and E. K. J. Vandamme, "Parameter extraction and 1/f noise in a surface and bulk-type, p-channel EDD MOSFET," Solid-State Electron., vol. 37, p. 1853, 1994.
8. P. Restle, "Individual oxide traps as probes into submicron devices," Appl. Phys. Lett., vol. 5, p. 1862, 1988.
9. P. Restle and A. Gnudi, "Internal probing of submicron FETs and photoemission using individual oxide traps," IBM J. Res. Develop., vol. 34, p. 227, 1990.