Atomic layer deposition of Ru films from bis(2,5-dimethylpyrrolyl)ruthenium and oxygen

Thin Solid Films

Volumn 520, Issue 7, 2012, Pages 2756-2763

  Kukli, Kaupo ^a,b   Aarik, Jaan ^a   Aidla, Aleks ^a   Jõgi, Indrek ^a   Arroval, Tõnis ^a   Lu, Jun ^c   Sajavaara, Timo ^d   Laitinen, Mikko ^d   Kiisler, Alma Asta ^a   Ritala, Mikko ^b   Leskelä, Markku ^b   Peck, John ^e   Natwora, Jim ^e   Geary, Joan ^e   Spohn, Ronald ^e   Meiere, Scott ^f   Thompson, David M ^g  

^a UNIVERSITY OF TARTU   (Estonia)

^b UNIVERSITY OF HELSINKI   (Finland)

^c UPPSALA UNIVERSITY   (Sweden)

^d UNIVERSITY OF JYVÄSKYLÄ   (Finland)

^e PRAXAIR INC   (United States)

^f FMC Lithium   (United States)

^g APPLIED MATERIALS INC   (United States)

Author keywords

Atomic layer deposition; Metal films; Ruthenium

Indexed keywords

DEPOSITION TEMPERATURES; HIGHER TEMPERATURES; METAL FILMS; NANOCRYSTALLINES; NUCLEATION AND GROWTH; RESISTIVITY VALUES; RU FILM; RU THIN FILMS; RUTHENIUM PRECURSORS; TIO;

ATOMIC LAYER DEPOSITION; ATOMS; DEPOSITION; HAFNIUM OXIDES; HYDROGEN; OXYGEN; RUTHENIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON OXIDES; THICK FILMS; TITANIUM DIOXIDE;

VAPOR DEPOSITION;

EID: 84856431425     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.11.088     Document Type: Article

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