Seed layer free conformal ruthenium film deposition on hole substrates by MOCVD using (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium

Electrochemical and Solid-State Letters

Volumn 9, Issue 7, 2006, Pages

  Kawano, Kazuhisa ^a   Nagai, Atsushi ^b   Kosuge, Hiroaki ^a   Shibutami, Tetsuo ^a   Oshima, Noriaki ^a   Funakubo, Hiroshi ^b  

^a TOSOH CORPORATION   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; ELECTRIC CONDUCTIVITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROSTRUCTURE; SUBSTRATES; TITANIUM ALLOYS;

CONFORMABILITY; CRYSTALLINITY; FILM DEPOSITION; HOLE SUBSTRATES;

RUTHENIUM COMPOUNDS;

EID: 33646882892     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2200011     Document Type: Article

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