In situ auger electron spectroscopy study of atomic layer deposition: Growth initiation and interface formation reactions during ruthenium ALD on Si-H, SiO2, and HfO2 surfaces

Langmuir

Volumn 23, Issue 11, 2007, Pages 6106-6112

  Park, Kie Jin ^a   Terry, David B ^a   Stewart, S Michael ^a   Parsons, Gregory N ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH INITIATION; GROWTH SURFACES; HYDROGEN TERMINATED SILICON; RUTHENOCENE EXPOSURE;

ATOMIC LAYER DEPOSITION; AUGER ELECTRON SPECTROSCOPY; GROWTH (MATERIALS); INTERFACES (MATERIALS); REACTION KINETICS; X RAY PHOTOELECTRON SPECTROSCOPY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 34249871079     PISSN: 07437463     EISSN: None     Source Type: Journal    
DOI: 10.1021/la061898u     Document Type: Article

References (21)

1. Wen, H.; Lysaght, P.; Alshareef, H.; Huffman, C.; Harris, H.; Choi, K.; Senzaki, Y.; Luan, H.; Majhi, P.; Lee, B.; Campin, M.; Foran, B.; Lian, G.; Kwong, D. J. Appl. Phys. 2005, 98, 043520.
2. Zhong, H.; Heuss, G.; Misra, V.; Luan, H.; Lee, C.; Kwong, D. Appl. Phys. Lett. 2001, 78, 1134.
3. Park, K. J.; Doub, J. M.; Gougousi, T.; Parsons, G. N. Appl. Phys. Lett. 2005, 86.
4. Kim, H. J. Vac. Sci. Technol., B 2003, 21, 2231-2261.
5. Aoyama, T.; Kiyotoshi, M.; Yamazaki, S.; Eguchi, K. Jpn. J. Appl. Phys., Part 1 1999, 38, 2194-2199.
6. Bandaru, J.; Sands, T.; Tsakalakos, L. J. Appl. Phys. 1998, 84, 1121-1125.
7. Krusinelbaum, L.; Wittmer, M. J. Electrochem. Soc. 1988, 135, 2610-2614.
8. Park, S. E.; Kim, H. M.; Kim, K. B.; Min, S. H. J. Electrochem. Soc. 2000, 147, 203-209.
9. Aaltonen, T.; Alen, P.; Ritala, M.; Leskelä, M. Chem. Vap. Deposition 2003, 9, 45.
10. Kwon, O. K.; Kim, J. H.; Park, H. S.; Kang, S. W. J. Electrochem. Soc. 2004, 151, G109-G112.
11. Green, M. L.; Ho, M.-Y.; Busch, B.; Wilk, G. D.; Sorsch, T.; Conard, T.; Brijs, B.; Vandervorst, W.; Raisanen, P. I.; Muller, D.; Bude, M.; Grazul, J. J. Appl. Phys. 2002, 92, 7168.
12. Haukka, S.; Tuominen, M. Proceeding O AVS-ALD2005, August 2005, San Jose, U.S.A. 2005.
13. Aaltonen, T.; Alen, P.; Ritala, M.; Leskelä, M. Chem. Vap. Deposition 2003, 9, 45-49.
14. Aaltonen, T.; Rahtu, A.; Ritala, M.; Leskelä, M. Electrochem. Solid-State Lett. 2003, 6, C130-C133.
15. Parsons, G. N.; Park, K. J.; Terry, D.; Stewart, S. M.; Hyde, G. K.; Hojo, D. In Proceeding of the 2006 International Atomic Layer Deposition Conference; AVS: Seoul, Korea, 2006.
16. Gougousi, T.; Parsons, G. N. J. Appi Phys. 2004, 95, 1391-1696.
17. Cumpson, P. J.; Seah, M. P. Surf. Interface Anal. 1997, 25, 430-446.
18. Somorjai, G. A. Introduction to Surface Chemistry and Catalysis; Wiley: New York, 1994.
19. Childs, K. D.; Carlson, B. A.; LaVanier, L. A.; Moulder, J. F.; F. Paul, D.; Stickle, W. F.; Watson, D. G. Handbook of Auger Electron Spectroscopy; Physical Electronics, Inc: Edenprairie, MN, 1995.
20. Haukka, S.; Lakomaa, E. L.; Suntola, T. Appl. Surf. Sci. 1994, 82/83, 548-552.
21. Lindblad, M.; Haukka, S.; Kytökivi, A.; Lakomaa, E. L.; Rautiainen, A.; Suntola, T. Appl. Surf. Sci. 1997, 121/122. 286-291.