Low-temperature preparation of metallic ruthenium films by MOCVD using bis(2,4-dimethylpentadienyl)ruthenium

Electrochemical and Solid-State Letters

Volumn 10, Issue 6, 2007, Pages 60-62

  Kawano, Kazuhisa ^a,c   Kosuge, Hiroaki ^a   Oshima, Noriaki ^a   Funakubo, Hiroshi ^b  

^a TOSOH CORPORATION   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^c ELECTROCHEMICAL SOCIETY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DECOMPOSITION TEMPERATURE; RUTHENIUM FILMS;

METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXIDATION; RUTHENIUM; THERMAL EFFECTS; VAPOR PRESSURE;

METALLIC FILMS;

EID: 34047245980     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2717367     Document Type: Article

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