Influence of single and double deposition temperatures on the interface quality of atomic layer deposited Al2O3 dielectric thin films on silicon

Journal of Applied Physics

Volumn 99, Issue 5, 2006, Pages

  Duenas S ^a   Castan H ^a   Garcia H ^a   De Castro, A ^a   Bailon L ^a   Kukli, K ^b,d   Aidla, A ^b   Aarik, J ^b   Mandar H ^b   Uustare, T ^b   Lu, J ^c   Harsta A ^c  

^a UNIVERSITY OF VALLADOLID   (Spain)

^b UNIVERSITY OF TARTU   (Estonia)

^c UPPSALA UNIVERSITY   (Sweden)

^d UNIVERSITY OF HELSINKI   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC CONDUCTANCE; MIM DEVICES; SEMICONDUCTING SILICON; THERMAL EFFECTS; THIN FILMS;

ATOMIC LAYER DEPOSITION; BUFFER LAYERS; CONDUCTANCE-TRANSIENT (G-T) TECHNIQUES; DOUBLE DEPOSITION TEMPERATURES;

ALUMINA;

EID: 33645236722     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2177383     Document Type: Article

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