Improvement of contact resistance between Ru electrode and TiN barrier in Ru/Crystalline-Ta2O5/Ru capacitor for 50 nm dynamic random access memory

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 B, 2005, Pages 2225-2229

  Lim, Hanjin ^a   Chung, Suk Jin ^a   Lee, Kwang Hee ^a   Lee, Jinil ^a   Kim, Jin Yong ^a   Yoo, Cha Young ^a   Kim, Sung Tae ^a   Chung, U In ^a   Moon, Joo Tae ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Capacitor; Contact resistance; Crystallization; Oxidation; Ru; Ta2O5; TiN

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; CAPACITORS; CRYSTALLINE MATERIALS; DIFFUSION; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC POTENTIAL; ELECTRODES; LEAKAGE CURRENTS; RUTHENIUM; TANTALUM COMPOUNDS; TITANIUM NITRIDE;

CONTACT RESISTANCE; HIGH-DENSITY STRUCTURES; SHORT CIRCUIT PATHS; TA2O5;

ELECTRIC RESISTANCE;

EID: 21244498562     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.2225     Document Type: Conference Paper

References (6)

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