Ruthenium films by digital chemical vapor deposition: Selectivity, nanostructure, and work function

Applied Physics Letters

Volumn 84, Issue 9, 2004, Pages 1606-1608

  Dey, Sandwip K ^a   Goswami, Jaydeb ^a   Gu, Diefeng ^a   De Waard, Henk ^b   Marcus, Steve ^b   Werkhoven, Chris ^b  

^a Arizona State University   (United States)

^b ASM AMERICA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION (ALD); WORK FUNCTION (WF);

CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRODES; GRAIN BOUNDARIES; HIGH RESOLUTION ELECTRON MICROSCOPY; INTERFACES (MATERIALS); LEAKAGE CURRENTS; NANOSTRUCTURED MATERIALS; POLYCRYSTALLINE MATERIALS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICA; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

RUTHENIUM;

EID: 1642588346     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1650911     Document Type: Article

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