Chemical vapor deposition of ruthenium and ruthenium oxide thin films for advanced complementary metal-oxide semiconductor gate electrode applications

Journal of Materials Research

Volumn 19, Issue 10, 2004, Pages 2947-2955

  Papadatos, Filippos ^a   Consiglio, Steve ^a   Skordas, Spyridon ^a   Eisenbraun, Eric T ^a   Kaloyeros, Alain E ^a   Peck, John ^b   Thompson, David ^b   Hoover, Cynthia ^b  

^a STATE UNIVERSITY OF NEW YORK   (United States)

^b PRAXAIR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRODES; FILM GROWTH; LOW TEMPERATURE PROPERTIES; NUCLEATION; OXYGEN; PHASE TRANSITIONS; REACTION KINETICS; RUTHENIUM; RUTHENIUM COMPOUNDS; SUBSTRATES; THIN FILMS;

OXYGEN FLOW; RUTHENIUM OXIDE THIN FILMS; SUBSTRATE TEMPERATURE;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 6444231982     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.2004.0372     Document Type: Article

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