SCOPUS 정보 검색 플랫폼

Volumn 520, Issue 6, 2012, Pages 1724-1728

Low-temperature preparation of phosphorus doped μc-Si:H thin films by low-frequency inductively coupled plasma assisted chemical vapor deposition

(6) Yan, W S a Wei, D Y a Guo, Y N a Xu, S a Ong, T M a Sern, C C a

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

Author keywords

Electrical properties; Inductively coupled plasma assisted chemical vapor deposition; Microcrystalline films; Phosphorus doping; Raman spectroscopy; Silicon; Solar cells; Thin films

Indexed keywords

AMORPHOUS STRUCTURES; CRYSTALLINE VOLUME FRACTION; DOPING CONCENTRATION; ELECTRON ENERGY DISTRIBUTION FUNCTIONS; HYDROGENATED MICROCRYSTALLINE SILICON; INDUCTIVELY-COUPLED; JOINT EFFECT; LOW FREQUENCY; LOW SUBSTRATE TEMPERATURE; LOW TEMPERATURES; LOW-ENERGY RANGE; MICROCRYSTALLINE FILMS; MICROCRYSTALLINE STRUCTURES; PHOSPHORUS DOPING; PHOSPHORUS-DOPED; RADIO FREQUENCIES; RADIO FREQUENCY POWER; RESISTANCE CURVES; ROOM TEMPERATURE; STRUCTURAL PHASE TRANSITION; SUBSTRATE TEMPERATURE; XRD MEASUREMENTS;

AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; DEPOSITION; DISTRIBUTION FUNCTIONS; ELECTRIC PROPERTIES; INDUCTIVELY COUPLED PLASMA; MICROCRYSTALLINE SILICON; PHASE TRANSITIONS; PHOSPHORUS; PLASMA DEPOSITION; RADIO; RADIO WAVES; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SILICON; SOLAR CELLS; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION;

FILM PREPARATION;

EID: 84855952207 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2011.08.048 Document Type: Article

Times cited : (5)

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