Dilution effect of Ar/H2 on the microstructures and photovoltaic properties of nc-Si:H deposited in low frequency inductively coupled plasma

Journal of Applied Physics

Volumn 110, Issue 2, 2011, Pages

  Zhou, H P ^a   Wei, D Y ^a   Xu, S ^a   Xiao, S Q ^a   Xu, L X ^a   Huang, S Y ^a   Guo, Y N ^a   Yan, W S ^a   Xu, M ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b South west University for Nationalities   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINITIES; DILUENT GAS; DILUTION EFFECT; GRAIN SIZE; HETEROJUNCTION SOLAR CELLS; HIGH CRYSTALLINITY; HYDROGENATED NANOCRYSTALLINE SILICON (NC-SI:H); LOW FREQUENCY; LOW TEMPERATURES; META-STABLE STATE; NC-SI:H; PHOTOVOLTAIC PROPERTY; PHOTOVOLTAIC RESPONSE; PLASMA ENVIRONMENTS; PREFERENTIAL ORIENTATION;

ARGON; HETEROJUNCTIONS; INDUCTIVELY COUPLED PLASMA; MICROSTRUCTURE; NANOCRYSTALLINE SILICON; SEMICONDUCTING SILICON COMPOUNDS; SOLAR POWER GENERATION; THIN FILMS; VAPOR DEPOSITION;

PHOTOVOLTAIC EFFECTS;

EID: 79961102640     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3605288     Document Type: Article

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