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Volumn 95, Issue 11, 2009, Pages

Self-organized vertically aligned single-crystal silicon nanostructures with controlled shape and aspect ratio by reactive plasma etching

(4) Xu, S a Levchenko, I b,c Huang, S Y a Ostrikov, K b,c

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

b CSIRO (Australia)

c UNIVERSITY OF SYDNEY (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CONTROLLED SHAPE; HYDROGEN TERMINATION; MASK LESS; MATERIAL DEPOSITION; NANO-CONES; NANO-MATERIALS; NANODOTS; NANOSTRUCTURE FORMATION; OPTIMUM PARAMETERS; REACTIVE PLASMAS; REDEPOSITION; SELF-ORGANIZED; SINGLE CRYSTAL SILICON; SINGLE CRYSTALLINE SILICON; SINGLE-CRYSTALLINE; VERTICALLY ALIGNED;

CRYSTALLINE MATERIALS; HYDROGEN; NANOSTRUCTURES; PLASMA ETCHING; PLASMAS; PRESSURE DROP;

ASPECT RATIO;

EID: 70349487384 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3232210 Document Type: Article

Times cited : (74)

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