On conductivity type conversion of p-type silicon exposed to a low-frequency inductively coupled plasma of Ar + H2

Journal of Physics D: Applied Physics

Volumn 43, Issue 50, 2010, Pages

  Zhou, H P ^a   Xu, L X ^a   Xu, S ^a   Huang, S Y ^a   Wei, D Y ^a   Xiao, S Q ^a   Yan, W S ^a   Xu, M ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b SICHUAN NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER-PROFILE; CONDUCTIVITY RECOVERY; CONDUCTIVITY TYPE CONVERSION; CZOCHRALSKI; ELECTRICAL PROPERTY; ELECTRON CONCENTRATION; H2 PLASMA; HALL EFFECT MEASUREMENT; HYDROGEN DIFFUSION; INDUCTIVELY-COUPLED; JUNCTION DEPTH; LOW FREQUENCY; NANO-CONES; P-N JUNCTION; P-TYPE; P-TYPE SILICON; P-TYPE SUBSTRATES; PLASMA TREATMENT; SHALLOW THERMAL DONORS; THERMAL DONOR;

ELECTRIC PROPERTIES; ELECTROMAGNETIC INDUCTION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HALL EFFECT; HYDROGEN; INDUCTIVELY COUPLED PLASMA; MAGNETIC FIELD EFFECTS; OXYGEN; PLASMA APPLICATIONS; SEMICONDUCTOR JUNCTIONS; SURFACE DEFECTS;

PHOTOVOLTAIC EFFECTS;

EID: 78650146633     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/50/505402     Document Type: Article

References (34)

1. Blackman M V, Charlton D E, Jenner M D, Purdy D R, Wotherspoon J, Elliot C T and Wite A M 1987 Electron. Lett. 23 978
2. Haakenaasen R, Colin T, Steen H and Trosdahl-Iversen L 2000 J. Electron. Mater. 29 849
3. Smith E, Siliquini J F, Musca C A, Antoszewski Dell J M, Faraone L and Piotrowski J 1998 J. Appl. Phys. 83 5555
4. Siliquini J F, Dell J M, Musca C A, Faraone L and Piotrowski J 1998 J. Cryst. Growth 184/185 1219
5. Zinchuk O, Drozdov N, Fedotov A, Mazanik A, Krekotsen N, Ukhov V, Partyka J, Wȩgierek P and Kołtunowicz K 2009 Vacuum 83 s99
6. Popov V P, Tyschenko I E, Safronov L N, Naumova O V, Antonova I V, Gutakovsky A K and Talochkin A B 2002 Thin Solid Films 403-404 500
7. Barakel D, Ulyashin A, Périchaud I and Martinuzzi S 2002 Sol. Energy Mater. Sol. Cells 72 285
8. Yamaguchi T, Taylor S J, Watanabe S, Ando K, Yamaguchi M, Hisamatsu T and Matsuda S 1998 Appl. Phys. Lett. 72 1226
9. Huang Y L, Ma Y, Job R and Ulyashin A G 2004 J. Appl. Phys. 96 7080
10. Simoen E, Claeys C, Rafí J M and Ulyashin A G 2006 Mater. Sci. Eng. B 134 189
11. Ulyashin A G, Bumay Y A, Job R and Fahrner W R 1998 Appl. Phys. A: Mater. Sci. Process. 66 399
12. Buzynin A, Luk'yanov A, Osiko V and Voronkov V 2002 Nucl. Instrum. Methods Phys. Res. B 186 366
13. Wolkenstein T 1973 Physico-Chimie de la Surface des Semiconducteurs (Moscow: MIR)
14. Götz W, Pensl G and Zulehner W 1992 Phys. Rev. B 46 4312
15. Newman R C, Ashwin M J, Pritchard R E and Tucker J H 1998 Phys. Status Solidi 210 519
16. Deák P, Snyder L L, Lindstrom J L, Corbett J W, Pearton S J and Tanvendale A J 1988 Phys. Lett. A 126 427
17. Newman R C, Tucker J H, Brown A R and McQuaid S A 1991 J. Appl. Phys. 70 3061
18. Xu S, Ostrikov K, Li Y, Tsakadze E L and Jones I R 2001 Phys. Plasmas 8 2549
19. Xu S, Ostrikov K, Luo W and Lee S 2000 J. Vac. Sci. Technol. A 18 2185
20. Xu S, Levchenko I, Huang S Y and Ostriko K 2009 Appl. Phys. Lett. 95 111505
21. Levchenko I, Huang S Y, Ostrikov K and Xu S 2010 Nanotechnology 21 025605
22. Veprek S, Wang C and Veprek-Heijman M G J 2008 J. Vac. Sci. Technol. A 26 313
23. Webb A P and Veprek S 1979 Chem. Phys. Lett. 62 173
24. Veprek S and Sarott F A 1982 Plasma Chem. Plasma Process. 2 233
25. Nordmark H, Holmestad R, Walmsley J C and Ulyashin A 2009 J. Appl. Phys. 105 033506
26. Muto S, Takeda S and Hirata M 1991 J. Appl. Phys. 70 3505
27. Dub C E and Hanoka J I 2005 Proc. 31st IEEE Photovoltaic Specialists Conf. (Orlando, FL) p 883) (unpublished)
28. Sze S M 1981 Physics of Semiconductor Devices (New York: Wiley)
29. Simoen E, Huang Y L, Ma Y, Lauwaert J, Clauws P, Rafí J M, Ulyashin A and Claeys C 2009 J. Electrochem. Soc. 156 H434
30. Wieringen A V and Warmoltz N 1956 Physica 22 849
31. Newman R C 2000 J. Phys.: Condens. Matter 12 R335
32. Smets A, Kessels W and Sanden M 2003 Appl. Phys. Lett. 82 1547
33. Burrows V A, Chabal Y J, Higashi G S, Raghavachari K and Christman S B 1988 Appl. Phys. Lett. 53 998
34. Stucki F, Schaefer J A, Anderson J R, Lapeyre G T and Göpel W 1983 Solid State Commun. 47 795