Low-temperature PECVD deposition of highly conductive microcrystalline silicon thin films

Journal of Materials Science: Materials in Electronics

Volumn 14, Issue 5-7, 2003, Pages 407-411

  Nardes, A M ^a   De Andrade, A M ^a   Fonseca, F J ^a   Dirani, E A T ^a,b   Muccillo, R ^c   Muccillo, E N S ^c  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

^b PONTIFÍCIA UNIVERSIDADE CATÓLICA DE SÃO PAULO   (Brazil)

^c INSTITUTO DE PESQUISAS ENERGÉTICAS E NUCLEARES   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; CRYSTALLINE MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC VARIABLES MEASUREMENT; HALL EFFECT; HYDROGEN; INFRARED SPECTROSCOPY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; THERMAL EFFECTS; THIN FILMS;

AC IMPEDANCE SPECTROSCOPY; DARK CONDUCTIVITY; MICROCRYSTALLINE SILICON THIN FILMS; STRUCTURAL PROPERTIES;

SEMICONDUCTING SILICON;

EID: 0038036088     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1023917205077     Document Type: Article

References (20)

1. O. Vertterl, F. Finger, R. Carius, P. Hapke, L. Houben, O. Kluth, A. Lambertz, A. Müch, B. Rech and H. Wagner, Sol. Energy Mater. Sol. Cells 62 (2000) 97.
2. Y. Mishima, S. Miyazaki, M. Hirose and Y. Osaka, Philos. Mag. B 46 (1982) 1.
3. P. Y. Timbrell, B. Ranchoux and H. Hamdi, J. Non-Cryst. Solids 64 (1984) 21.
4. J. Ross Macdonald, in "Impedance Spectroscopy: Emphasing Solid Materials and Systems" (John Wiley & Sons, 1987).
5. R. Martins, A. A. Maçarico, I. Ferreira, R. Nunes, A. Bicho and E. Fortunato, Thin Solid Films 303 (1997) 47.
6. S. Veprek, F. A. Sarot and Z. Iqbal, Phys. Rev. B 36 (1987) 3344.
7. M. Luysberg, P. Hapke, R. Carius and F. Finger, Philos. Mag. A 75 (1997) 31.
8. T. Kaneko, M. Wakagi, K. Onisawa and T. Minenmura, Appl. Phys. Lett. 64 (1994) 1865.
9. M. Wakagi, T. Kaneko, K. Ogata and A. Nakano, Proc. Mater. Res. Symp. 283 (1993) 555.
10. E. A. T. Dirani, A. M. Andrade, L. K. Noda, F. J. Fonseca and P. S. Santos, J. Non-Cryst. Solids 273 (2000) 307.
11. K. Komoto, Y. Urano, J. L. Guizot, G. Gangly and A. Matsuda, Jpn. J. Appl. Phys. 30 (1991) L790.
12. P. Roca, I. Cabarrocas, N. Layadi, B. Drevillon and I. Solomon, J. Non-Cryst. Solids 198-200 (1996) 871.
13. P. J. Zanzucchi, in "Semiconductors and Semimetals" 21, part B (Academic Press, Inc., Princeton, New Jersey, 1984) p. 121.
14. P. Apuim, V. Chu and J. P. Conde, J. Appl. Phys. 86 (1999) 3812.
15. P. G. Lecomber, D. I. Jones and W. E. Spear, Philos. Mag. 35 (1977) 1173.
16. F. J. Fonseca, R. Galloni and A. N. Larsen, Philos. Mag. B 63 (1993) 107.
17. D. Adler, in "Semiconductors and Semimetals" 21, part A (Academic Press, Inc., Princeton, New Jersey, 1984) p. 306.
18. K. S. Cole and R. H. Cole, J. Chem. Phys. 9 (1941) 341.
19. C. C. Tsai, G. B. Anderson and R. Thompson, in Proc. Mater. Res. Soc. Symp. 192 (1990) 475.
20. F. J. Kampas, J. Appl. Phys. 20 (1982) 6408.