Effect of radio frequency power and total mass-flow rate on the properties of microcrystalline silicon films prepared by helium-diluted-silane glow discharge

Thin Solid Films

Volumn 518, Issue 23, 2010, Pages 7019-7023

  Torres, I ^a   Barrio, R ^a   Santos, J D ^a   Gonzalez N ^a   Gandia J J ^a  

^a CIEMAT   (Spain)

Author keywords

Microcrystalline silicon; Optoelectronic properties; Plasma enhanced chemical vapor deposition; Raman spectroscopy; Structural properties; X ray diffraction

Indexed keywords

AMORPHOUS TISSUES; CRYSTALLINE GRAINS; DEEXCITATION PROCESS; DEFECT FORMATION; ELECTRICAL CHARACTERISTIC; ELECTRICAL MEASUREMENT; GAS FLOWS; GRAIN DEFECTS; HELIUM DILUTION; HIGH ENERGY; HYDROGEN DILUTION; HYDROGENATED MICROCRYSTALLINE SILICON; IONS BOMBARDMENT; LOW DEPOSITION TEMPERATURE; MICROCRYSTALLINE SILICON FILMS; OPTOELECTRONIC PROPERTIES; RADIO FREQUENCY POWER; STRUCTURAL MEASUREMENTS; TOTAL MASS;

AERODYNAMICS; DEFECT DENSITY; DEFECTS; DEPOSITION; DIFFRACTION; FILM PREPARATION; FLOW OF GASES; GLOW DISCHARGES; HELIUM; ION BOMBARDMENT; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RADIO; RADIO WAVES; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; STRUCTURAL PROPERTIES; VAPOR DEPOSITION; X RAY DIFFRACTION;

MICROCRYSTALLINE SILICON;

EID: 77956225032     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.06.050     Document Type: Article

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