Microwave dielectric properties of SiC(B) solid solution powder prepared by sol-gel

Journal of Alloys and Compounds

Volumn 475, Issue 1-2, 2009, Pages 506-509

  Li, Zhimin ^a,b   Zhou, Wancheng ^a   Lei, Tianmin ^b   Luo, Fa ^a   Huang, Yunxia ^b   Cao, Quanxi ^b  

^a NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

^b XIDIAN UNIVERSITY   (China)

Author keywords

Dielectric properties; Point defects; SiC(B) solid solution; Sol gel processes

Indexed keywords

CERAMIC CAPACITORS; CRYSTALLIZATION; DIELECTRIC LOSSES; DOPING (ADDITIVES); GELATION; GELS; NANOSTRUCTURED MATERIALS; PERMITTIVITY; POINT DEFECTS; POWDERS; SILICON CARBIDE; SOL-GEL PROCESS; SOL-GELS; SOLIDIFICATION; SOLS;

ELECTRIC PERMITTIVITIES; FREQUENCY RANGES; IMAGINARY PARTS; MICROWAVE DIELECTRIC PROPERTIES; REAL PARTS; SIC POWDERS; SIC(B) SOLID SOLUTION; SOL-GEL PROCESSES;

SOLID SOLUTIONS;

EID: 63649100138     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2008.07.070     Document Type: Article

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