Electric transport mechanism in intrinsic and p-doped microcrystalline silicon thin films

Journal of Applied Physics

Volumn 94, Issue 4, 2003, Pages 2417-2422

  Concari, S B ^a   Buitrago, R H ^a   Gutierrez M T ^b   Gandia J J ^b  

^a UNIVERSIDAD NACIONAL DEL LITORAL   (Argentina)

^b CIEMAT   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ATOMIC FORCE MICROSCOPY; BORON; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; FERMI LEVEL; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; SILICON;

ELECTRIC TRANSPORT MECHANISM;

THIN FILMS;

EID: 0041923566     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1593215     Document Type: Article

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