Thermodynamic evolution of antiphase boundaries in GaP/Si epilayers evidenced by advanced X-ray scattering

Applied Surface Science

Volumn 258, Issue 7, 2012, Pages 2808-2815

  Guo, W ^a   Bondi, A ^a   Cornet, C ^a   Letoublon A ^a   Durand, O ^a   Rohel, T ^a   Boyer Richard, S ^a   Bertru, N ^a   Loualiche, S ^a   Even, J ^a   Le Corre, A ^a  

^a UNIVERSITÉ EUROPÉENNE DE BRETAGNE   (France)

Author keywords

Growth models; Migration enhanced epitaxy; Molecular beam epitaxy; Planar defects; Semi conducting III V materials; X ray scattering

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTALLITE SIZE; EPILAYERS; GALLIUM PHOSPHIDE; III-V SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; TEMPERATURE; X RAY DIFFRACTION;

GROWTH MODELS; HETEROGENEOUS GROWTH; MIGRATION ENHANCED EPITAXY; NON-DESTRUCTIVE ANALYSIS; PLANAR DEFECT; SEMI CONDUCTING III-V MATERIALS; THERMODYNAMIC EQUILIBRIA; THERMODYNAMIC EVOLUTION;

X RAY SCATTERING;

EID: 84855532119     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2011.10.139     Document Type: Article

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