Anti-phase domain-free growth of GaAs on offcut (001) Ge wafers by molecular beam epitaxy with suppressed Ge outdiffusion

Journal of Electronic Materials

Volumn 27, Issue 7, 1998, Pages 900-907

  Sieg, R M ^a   Ringel, S A ^a   Ting, S M ^b   Fitzgerald, E A ^b   Sacks, R N ^a  

^a Ohio State University   (United States)

^b Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

Anti phase domain (APD) free growth; GaAs Ge; Ge outdiffusion; Molecular beam epitaxy (MBE)

Indexed keywords

EID: 0000938776     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0116-1     Document Type: Article

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