Near room temperature electrical injection lasing for dilute nitride Ga(NAsP)/GaP quantum-well structures grown by metal organic vapour phase epitaxy

Electronics Letters

Volumn 42, Issue 10, 2006, Pages 601-603

  Kunert, B ^a,c   Klehr, A ^b   Reinhard, S ^a   Volz, K ^a   Stolz, W ^a  

^a PHILIPPS UNIVERSITY MARBURG   (Germany)

^b LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^c NAsP III/V GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; HETEROJUNCTIONS; INJECTION LASERS; LATTICE CONSTANTS; MICROELECTRONICS; OPTOELECTRONIC DEVICES; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE; VAPOR PHASE EPITAXY;

ELECTRICAL INJECTION LASING; METAL ORGANIC VAPOUR PHASE EPITAXY; NOVEL MATERIAL SYSTEM;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 33646687305     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20060295     Document Type: Article

References (5)

1. Krömer, H., Liu, T.-Y., and Petroff, P.M.: ' GaAs on Si and related systems: problems and prospects ', J. Cryst. Growth, 1989, 95, p. 96-102
2. Yonezu, H.: ' Control of structural defects in group-III-V-N alloys grown on Si ', Semicond. Sci. Technol., 2002, 17, p. 762-768
3. Kunert, B., Volz, K., Koch, J., and Stolz, W.: ' Novel direct band-gap Ga(NAsP)-material system pseudomorphically grown on GaP-substrate ', Appl. Phys. Lett., 2006, 88, accepted for publication
4. Stolz, W., Kunert, B., Volz, K., Koch, J., Borck, S., and Rühle, W.W.: ' Novel GaP-based dilute nitride Ga(NAsP)/GaP laser material system ', Postdeadline paper PDG-3, Proc. Int. Quantum Electronics Conf. and Conf. on Lasers and Electro-Optics, Tokyo, Japan 2005, IEEE, Piscataway
5. Kunert, B., Reinhard, S., Koch, J., Lampalzer, M., Volz, K., and Stolz, W.: ' First demonstration of electrical injection lasing in the novel dilute nitride Ga(NAsP)/GaP-material system ', Phys. Status Solidi C, 2006, 3, p. 614-618