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Volumn 312, Issue 15, 2010, Pages 2179-2184

Growth of low defect density GaP layers on Si substrates within the critical thickness by optimized shutter sequence and post-growth annealing

Author keywords

A1. Defects; A1. Growth models; A1. Surfaces; A3. Migration enhanced epitaxy; A3. Molecular beam epitaxy; B2. Semiconducting gallium compounds

Indexed keywords

A1. GROWTH MODELS; A3. MIGRATION ENHANCED EPITAXY; A3. MOLECULAR BEAM EPITAXY; B2. SEMICONDUCTING GALLIUM COMPOUNDS; GROWTH MODELS; MIGRATION ENHANCED EPITAXY;

EID: 77954472933     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.04.038     Document Type: Article
Times cited : (43)

References (38)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.