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Volumn 312, Issue 15, 2010, Pages 2179-2184
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Growth of low defect density GaP layers on Si substrates within the critical thickness by optimized shutter sequence and post-growth annealing
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Author keywords
A1. Defects; A1. Growth models; A1. Surfaces; A3. Migration enhanced epitaxy; A3. Molecular beam epitaxy; B2. Semiconducting gallium compounds
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Indexed keywords
A1. GROWTH MODELS;
A3. MIGRATION ENHANCED EPITAXY;
A3. MOLECULAR BEAM EPITAXY;
B2. SEMICONDUCTING GALLIUM COMPOUNDS;
GROWTH MODELS;
MIGRATION ENHANCED EPITAXY;
ANNEALING;
DEFECT DENSITY;
DEFECTS;
EPITAXIAL GROWTH;
MOLECULAR BEAM EPITAXY;
MOLECULAR BEAMS;
MONOLAYERS;
OPTIMIZATION;
SEMICONDUCTING GALLIUM;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTOR GROWTH;
STACKING FAULTS;
SUBSTRATES;
SURFACE ROUGHNESS;
GALLIUM ALLOYS;
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EID: 77954472933
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.04.038 Document Type: Article |
Times cited : (43)
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References (38)
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