Heteroepitaxy of GaP on Si: Correlation of morphology, anti-phase-domain structure and MOVPE growth conditions

Journal of Crystal Growth

Volumn 310, Issue 7-9, 2008, Pages 1595-1601

  Nemeth I ^a   Kunert, B ^b   Stolz, W ^a   Volz, K ^a  

^a PHILIPPS UNIVERSITY MARBURG   (Germany)

^b NAsP III/V GmbH   (Germany)

Author keywords

A1. Crystal structure; A3. Organometallic vapor phase epitaxy; B2. Semiconducting III V materials

Indexed keywords

CRYSTAL STRUCTURE; GROWTH TEMPERATURE; METALLORGANIC VAPOR PHASE EPITAXY; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

ANTI-PHASE DOMAINS (APD); SELF ANNIHILATION;

EPITAXIAL GROWTH;

EID: 41449091481     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.11.127     Document Type: Article

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