Control and elimination of nucleation-related defects in GaP/Si(001) heteroepitaxy

Applied Physics Letters

Volumn 94, Issue 23, 2009, Pages

  Grassman, T J ^a   Brenner, M R ^a   Rajagopalan, S ^a   Unocic, R ^a   Dehoff, R ^a   Mills, M ^a   Fraser, H ^a   Ringel, S A ^a  

^a Ohio State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIPHASE DOMAINS; EXTENDED DEFECT; GAP SUBSTRATES; HETEROEPITAXY; HIGH QUALITY; MICROTWINS; MIGRATION ENHANCED EPITAXY; MISFIT DISLOCATIONS; SI (001) SUBSTRATE;

ATOMIC FORCE MICROSCOPY; DEFECTS; EPITAXIAL GROWTH; LATTICE MISMATCH; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NUCLEATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON; STACKING FAULTS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM ALLOYS;

EID: 67649136098     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3154548     Document Type: Article

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