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Volumn 315, Issue 1, 2011, Pages 28-31
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Correlation between hetero-interface properties and photoluminescence efficiency of Ga(NAsP)/(BGa)P multi-quantum well structures on (0 0 1) Si substrate
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Author keywords
A3: Organometallic vapor phase epitaxy; B1: Dilute nitrides; B2: Semiconducting IIIV materials; B3: Laser diodes; B3: Optoelectronic integrated circuits
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Indexed keywords
B3: LASER DIODES;
DILUTE NITRIDES;
OPTOELECTRONIC INTEGRATED CIRCUITS;
ORGANOMETALLIC VAPOR PHASE EPITAXY;
SEMI CONDUCTING III-V MATERIALS;
CRYSTAL IMPURITIES;
CRYSTALS;
EPITAXIAL GROWTH;
GALLIUM ALLOYS;
HETEROJUNCTIONS;
INTEGRATED CIRCUITS;
MATERIALS SCIENCE;
METALLORGANIC VAPOR PHASE EPITAXY;
NITRIDES;
ORGANOMETALLICS;
PHOTOLUMINESCENCE;
QUANTUM WELL LASERS;
SEMICONDUCTING SILICON;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR DEVICE STRUCTURES;
SEMICONDUCTOR DIODES;
SEMICONDUCTOR GROWTH;
SUBSTRATES;
VAPORS;
SEMICONDUCTOR QUANTUM WELLS;
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EID: 79551681225
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.07.068 Document Type: Article |
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Times cited : (18)
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References (12)
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