Light emitting diodes on silicon substrates: Preliminary results

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue 10, 2009, Pages 2212-2216

  Bondi, Alexandre ^a   Guo, Weiming ^a   Pedesseau, Laurent ^a   Boyer Richard, Soline ^a   Folliot, Hervé ^a   Chevalier, Nicolas ^a   Cornet, Charles ^a   Letoublon, Antoine ^a   Durand, Olivier ^a   Labbé, Chistophe ^a   Gicquel, Maud ^a   Lecorre, Alain ^a   Even, Jacky ^a   Loualiche, Slimane ^a   Moreac, Alain ^b  

^a UNIVERSITÉ DE RENNES 1   (France)

^b UNIVERSITÉ DE RENNES 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE ZONE; CRYSTALLINE QUALITY; ELECTRONIC BAND-STRUCTURE; GAP SUBSTRATES; LIGHT EMITTERS; LOW TEMPERATURES; PHONON REPLICA; PHOTONICS APPLICATIONS; QUANTUM WELL; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SILICON SUBSTRATES; STRUCTURATION;

CRYSTAL GROWTH; LIGHT EMISSION; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOTECHNOLOGY; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

GALLIUM ALLOYS;

EID: 70949106630     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200881728     Document Type: Conference Paper

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