Room temperature photoluminescence of high density (In,Ga)As/GaP quantum dots

Applied Physics Letters

Volumn 99, Issue 14, 2011, Pages

  Nguyen Thanh, T ^a,b   Robert, C ^a,b   Cornet, C ^a,b   Perrin, M ^a,b   Jancu, J M ^a,b   Bertru, N ^a,b   Even, J ^a,b   Chevalier, N ^a,b   Folliot, H ^a,b   Durand, O ^a,b   Le Corre, A ^a,b  

^a UNIVERSITÉ EUROPÉENNE DE BRETAGNE   (France)

^b UNIVERSITÉ DE RENNES 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMISTIC CALCULATIONS; BANDGAP PROPERTIES; GAP SUBSTRATES; HIGH DENSITY; INAS/GAAS; INAS/INP; PHOTOLUMINESCENCE TEMPERATURE; QUANTUM CONFINEMENT EFFECTS; QUANTUM STRUCTURE; REFERENCE SYSTEMS; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SELF ASSEMBLED QUANTUM DOTS;

ELECTRONIC PROPERTIES; ENERGY GAP; GALLIUM; GALLIUM ALLOYS; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM DOTS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 80053949858     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3646911     Document Type: Article

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