X-ray study of antiphase domains and their stability in MBE grown GaP on Si

Journal of Crystal Growth

Volumn 323, Issue 1, 2011, Pages 409-412

  Letoublon A ^a,b   Guo, W ^a,b   Cornet, C ^a,b   Boulle, A ^c   Veron M ^d   Bondi, A ^a,b   Durand, O ^a,b   Rohel, T ^a,b   Dehaese, O ^a,b   Chevalier, N ^a,b   Bertru, N ^a,b   Le Corre, A ^a,b  

^a UNIVERSITÉ EUROPÉENNE DE BRETAGNE   (France)

^b UNIVERSITÉ DE RENNES 1   (France)

^c UNIVERSITY OF LIMOGES   (France)

^d UNIV GRENOBLE ALPES   (France)

Author keywords

Molecular beam epitaxy; Planar defects; Semiconducting IIIV materials; Semiconducting silicon; X ray diffraction

Indexed keywords

AFM; ANTIPHASE BOUNDARIES; ANTIPHASE DOMAINS; MBE GROWTH; PLANAR DEFECT; SEMI CONDUCTING III-V MATERIALS; SI SUBSTRATES; STRUCTURAL DEFECT; TEM; THERMODYNAMIC EVOLUTION; X-RAY STUDIES;

DEFECTS; DIFFRACTION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAYS;

GALLIUM ALLOYS;

EID: 79958010207     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.10.137     Document Type: Article

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