Growth of pit-free GaP on Si by suppression of a surface reaction at an initial growth stage

Journal of Crystal Growth

Volumn 311, Issue 3, 2009, Pages 794-797

  Yamane, Keisuke ^a   Kobayashi, Tomohito ^a   Furukawa, Yuzo ^a   Okada, Hiroshi ^a   Yonezu, Hiroo ^a   Wakahara, Akihiro ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

A1. Defects; A1. Growth models; A1. Surfaces; A3 Molecular beam epitaxy; A3. Migration enhanced epitaxy; B2 Semiconducting gallium compounds

Indexed keywords

CRYSTAL GROWTH; DROP FORMATION; DROPS; ELECTRONIC MEDICAL EQUIPMENT; ETCHING; GALLIUM COMPOUNDS; GROWTH (MATERIALS); MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; PHASE INTERFACES; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES; SILICON; STACKING FAULTS; SUBSTRATES; SURFACE MORPHOLOGY; SURFACE REACTIONS; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

A1. DEFECTS; A1. GROWTH MODELS; A1. SURFACES; A3 MOLECULAR BEAM EPITAXY; A3. MIGRATION ENHANCED EPITAXY; B2 SEMICONDUCTING GALLIUM COMPOUNDS;

GALLIUM ALLOYS;

EID: 59749087381     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.09.097     Document Type: Article

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