Physical model for trap-assisted inelastic tunneling in metal-oxide-semiconductor structures

Journal of Applied Physics

Volumn 90, Issue 7, 2001, Pages 3396-3404

  Jimenez Molinos F ^a   Palma, A ^a   Gamiz F ^a   Banqueri, J ^a   Lopez Villanueva J A ^a  

^a UNIVERSITY OF GRANADA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035477056     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1398603     Document Type: Article

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