Electrical characterization of stressed and broken down SiO2 films at a nanometer scale using a conductive atomic force microscope

Journal of Applied Physics

Volumn 91, Issue 3, 2002, Pages 2071-2079

  Porti, M ^a   Nafria M ^a   Aymerich, X ^a   Olbrich, A ^b   Ebersberger, B ^b  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AFFECTED AREA; BREAKDOWN PROCESS; BROKEN DOWN; CONDUCTION CHANNEL; CONDUCTION STATE; CONDUCTIVE ATOMIC FORCE MICROSCOPES; ELECTRICAL CHARACTERIZATION; EXPERIMENTAL EVIDENCE; GATE OXIDE; MACROSCOPIC TESTS; METAL OXIDE SEMICONDUCTOR STRUCTURES; NANO-METER SCALE; NANOMETRIC SCALE; NANOMETRICS; OXIDE BREAKDOWN; PREBREAKDOWN; SUDDEN CHANGE; ULTRA-THIN;

ATOMIC FORCE MICROSCOPY; DEGRADATION; MOS DEVICES; ULTRATHIN FILMS;

CONDUCTIVE FILMS;

EID: 33845450358     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1430542     Document Type: Article

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