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Volumn 97, Issue 26, 2010, Pages

Correlation between the nanoscale electrical and morphological properties of crystallized hafnium oxide-based metal oxide semiconductor structures

(7) Iglesias, V a Porti, M a Nafria M a Aymerich, X a Dudek, P b Schroeder, T b Bersuker, G c

a UNIVERSITAT AUTÒNOMA DE BARCELONA (Spain)

b IHP (Germany)

c SEMATECH (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVE ATOMIC FORCE MICROSCOPY; ELECTRICAL CHARACTERISTIC; ELECTRICAL STRESS; HIGH-K DIELECTRIC; INTRINSIC ELECTRICAL PROPERTY; LOCAL CHARACTERISTICS; METAL OXIDE SEMICONDUCTOR STRUCTURE; MORPHOLOGICAL PROPERTIES; NANO SCALE; POLYCRYSTALLINE; STRUCTURAL CHARACTERISTICS; ULTRAHIGH VACUUM CONDITIONS;

ATOMIC FORCE MICROSCOPY; CONDUCTIVE FILMS; GRAIN BOUNDARIES; HAFNIUM; HAFNIUM OXIDES; METALLIC COMPOUNDS; MOS DEVICES;

ELECTRIC PROPERTIES;

EID: 78650893982 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3533257 Document Type: Article

Times cited : (61)

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