Nanometer-Scale Analysis of Current Limited Stresses Impact on SiO 2 Gate Oxide Reliability Using C-AFM

IEEE Transactions on Nanotechnology

Volumn 3, Issue 1 SPEC. ISS., 2004, Pages 55-60

  Porti, Marc ^a   Nafría, Montserrat ^a   Aymerich, Xavier ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

Atomic force microscopy; Current limited stress; Dielectric breakdown; Metal oxide semiconductor (MOS) devices; SiO2 films

Indexed keywords

ATOMIC FORCE MICROSCOPY; DIELECTRIC PROPERTIES; ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; RELIABILITY; SEMICONDUCTING FILMS; SILICA; STRESS ANALYSIS;

CURRENT LIMITED STRESS; DIELECTRIC BREAKDOWN; METAL-OXIDE-SEMICONDUCTOR (MOS) DEVICES; SIO2 FILMS;

MOS DEVICES;

EID: 2342586184     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2004.824023     Document Type: Conference Paper

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