Grain boundary-driven leakage path formation in HfO2 dielectrics

2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010

Volumn , Issue , 2010, Pages 333-336

  Bersuker, G ^a   Yum, J ^a   Iglesias, V ^a,b   Porti, M ^a,b   Nafria M ^a,b   McKenna, K ^a,c,d   Shluger, A ^a,c,d   Kirsch, P ^a   Jammy, R ^a  

^a SEMATECH   (United States)

^b UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^c UNIVERSITY COLLEGE LONDON   (United Kingdom)

^d TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO CALCULATIONS; CONDUCTIVE AFM; CONSTANT VOLTAGE STRESS; CURRENT FLOWS; DATA ANALYSIS; ELECTRICAL MEASUREMENT; ELECTRICALLY ACTIVE DEFECTS; ENERGY CHARACTERISTICS; LEAKAGE PATHS; MIM CAPACITORS; NEUTRAL OXYGEN VACANCY; STRESS VOLTAGES; SUB-BANDS; TIME EVOLUTIONS; TRAPPING/DETRAPPING;

DATA FLOW ANALYSIS; DIELECTRIC MATERIALS; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; HAFNIUM COMPOUNDS; MIM DEVICES; OXYGEN; OXYGEN VACANCIES; VACANCIES;

LEAKAGE (FLUID);

EID: 78649929802     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2010.5618225     Document Type: Conference Paper

References (5)

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3. 2, " Phys. Rev. Lett. 99, 155504, 2007.
4. 2", Appl. Phys. Lett. 95, 222111, 2009.
5. J. McPherson, J-Y. Kim, A. Shanware, and H. Mogul, "Thermochemical description of dielectric breakdown in high dielectric constant materials, " Appl.Phys.Lett. 82, 2121, 2003.