Structural and electrical evolution of gate dielectric breakdown observed by conductive atomic force microscopy

Applied Physics Letters

Volumn 88, Issue 3, 2006, Pages 1-3

  Zhang, Li ^a   Mitani, Yuichiro ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BIPOLAR TRANSISTORS; DEFORMATION; DEGRADATION; ELECTRIC FIELDS; ELECTRICAL ENGINEERING; STRESS ANALYSIS;

BREAKDOWN; ELECTROTHERMAL EFFECT; FLATBAND SHIFT; STRESS POLARITY;

DIELECTRIC LOSSES;

EID: 31144450841     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2166679     Document Type: Article

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