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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 4, 2009, Pages 2048-2054

Current collapse transient behavior and its mechanism in submicron-gate AlGaN/GaN heterostructure transistors

(2) Hasegawa, Hideki a Akazawa, Masamichi a

a HOKKAIDO UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; ALGAN/GAN HETEROSTRUCTURES; CURRENT COLLAPSE; DRAIN CURRENT TRANSIENT; ELECTRON TRANSPORT; EMISSION PROCESS; GATE EDGE; GATE STRESS; ORDERS OF MAGNITUDE; PINCHOFF; PLANAR SCHOTTKY DIODES; RATE-LIMITING PROCESS; REVERSE CURRENTS; SCHOTTKY DIODES; SHOCKLEY-READ-HALL; SOURCE AND DRAIN ELECTRODES; STEADY STATE CHARACTERISTICS; SUBMICRON; SURFACE STATE; THIN SURFACE BARRIERS; TIME-SCALES; TRANSIENT BEHAVIOR; TRANSIENT CHARACTERISTIC; TUNNELING INJECTION;

DIODES; ELECTRIC CURRENT MEASUREMENT; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HETEROJUNCTIONS; SCHOTTKY BARRIER DIODES; TRANSIENTS; TUNNELING (EXCAVATION); WIND TUNNELS;

DRAIN CURRENT;

EID: 68349152993 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.3139882 Document Type: Article

Times cited : (21)

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