Deep levels and nonlinear characterization of AlGaN/GaN HEMTs on silicon carbide substrate

Microelectronics Journal

Volumn 40, Issue 8, 2009, Pages 1161-1165

  Gassoumi, M ^a   Bluet, J M ^b   Gaquiere C ^c   Guillot, G ^b   Maaref, H ^a  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

^b INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^c INSTITUT D ELECTRONIQUE   (France)

Author keywords

2DEG and hole like; AlGaN GaN; CDLTS; Deep levels; HEMT; Sic substrate

Indexed keywords

2DEG AND HOLE-LIKE; ALGAN/GAN; CDLTS; DEEP LEVELS; HEMT; SIC SUBSTRATE;

ACTIVATION ENERGY; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON MOBILITY; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; SILICON CARBIDE; THRESHOLD VOLTAGE;

SUBSTRATES;

EID: 67651221803     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2007.02.005     Document Type: Article

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