The effects of gate length variation and trapping effects on the transient response of AlGaN/GaN HEMT's on SiC substrates

Microelectronic Engineering

Volumn 88, Issue 4, 2011, Pages 370-372

  Gassoumi, M ^a   Ben Salem, M M ^a   Saadaoui, S ^a   Grimbert, B ^b   Fontaine, J ^b   Gaquiere, C ^b   Maaref, H ^a  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

^b INSTITUT D ELECTRONIQUE   (France)

Author keywords

AlGaN GaN; CDLTS; Deep level; Gate length; HEMT; Surface traps

Indexed keywords

ALGAN/GAN; CDLTS; DEEP LEVEL; GATE LENGTH; HEMT; SURFACE TRAPS;

ACTIVATION ENERGY; CHARGE TRAPPING; DEEP LEVEL TRANSIENT SPECTROSCOPY; FIELD EFFECT TRANSISTORS; GALLIUM; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; LEAKAGE (FLUID); SILICON CARBIDE;

SURFACE DEFECTS;

EID: 79751533153     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2010.09.027     Document Type: Conference Paper

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