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Microelectronic Engineering

Volumn 89, Issue 1, 2012, Pages 2-5

The effect of lanthanum (La) incorporation in ultra-thin ZrO2 high-κ gate dielectrics

(4) Liu, Chuan Hsi a Juan, Pi Chun b Chou, Yi Hsien a Hsu, Hung Wen c

a NATIONAL TAIWAN NORMAL UNIVERSITY (Taiwan)

b MING CHI UNIVERSITY OF TECHNOLOGY (Taiwan)

c NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY (Taiwan)

Author keywords

Flatband voltage shift; High dielectrics; Interfacial layer; Thermal stability; XPS depth profile; ZrLaO

Indexed keywords

BARRIER HEIGHTS; CAPACITANCE VOLTAGE CHARACTERISTIC; CO-SPUTTERING TECHNIQUES; COMBINED METHOD; CRYSTALLIZATION TEMPERATURE; CURRENT VOLTAGE; DEPTH PROFILE; ELECTRICAL CHARACTERISTIC; ELLIPSOMETERS; FLAT-BAND VOLTAGE SHIFT; HRTEM IMAGES; INTERFACIAL LAYER; METAL OXIDE SEMICONDUCTOR; RELATIVE DIELECTRIC CONSTANT; SILICATE FORMATION; ULTRA-THIN; XRD SPECTRA; ZRLAO;

DIELECTRIC MATERIALS; GATE DIELECTRICS; LANTHANUM; LANTHANUM OXIDES; MOS CAPACITORS; SILICATES; THERMODYNAMIC STABILITY; X RAY PHOTOELECTRON SPECTROSCOPY; ZIRCONIUM ALLOYS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 81855175323 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2011.08.003 Document Type: Conference Paper

Times cited : (7)

References (30)

1
- 33845988058
- C.H. Liu, and F.C. Chiu IEEE Electron Dev. Lett. 28 2007 62
- (2007) IEEE Electron Dev. Lett. , vol.28 , pp. 62
- Liu, C.H.¹ Chiu, F.C.²

2
- 34248590809
- D.C. Hsu, M.T. Wang, J.Y. Lee, and P.C. Juan J. Appl. Phys. 101 2007 094105
- (2007) J. Appl. Phys. , vol.101 , pp. 094105
- Hsu, D.C.¹ Wang, M.T.² Lee, J.Y.³ Juan, P.C.⁴

3
- 34247249900
- R.I. Hegde, D.H. Triyoso, S.B. Samavedam, and B.E. White J. Appl. Phys. 101 2007 074113
- (2007) J. Appl. Phys. , vol.101 , pp. 074113
- Hegde, R.I.¹ Triyoso, D.H.² Samavedam, S.B.³ White, B.E.⁴

4
- 35348925971
- S. Pan, S.J. Ding, Y. Huang, Y.J. Huang, D.W. Zhang, L.K. Wang, and R. Liu J. Appl. Phys. 102 2007 073706
- (2007) J. Appl. Phys. , vol.102 , pp. 073706
- Pan, S.¹ Ding, S.J.² Huang, Y.³ Huang, Y.J.⁴ Zhang, D.W.⁵ Wang, L.K.⁶ Liu, R.⁷

5
- 26444437825
- H.S. Choi, K.S. Seol, D.Y. Kim, J.S. Kwak, C.S. Son, and I.H. Choi Vacuum 80 2005 310
- (2005) Vacuum , vol.80 , pp. 310
- Choi, H.S.¹ Seol, K.S.² Kim, D.Y.³ Kwak, J.S.⁴ Son, C.S.⁵ Choi, I.H.⁶

6
- 0036863349
- W.J. Zhu, T. Tamagawa, M. Gibson, T. Furukawa, and T.P. Ma IEEE Electron Dev. Lett. 23 2002 649
- (2002) IEEE Electron Dev. Lett. , vol.23 , pp. 649
- Zhu, W.J.¹ Tamagawa, T.² Gibson, M.³ Furukawa, T.⁴ Ma, T.P.⁵

7
- 0035872897
- G.D. Wilk, R.M. Wallace, and J.M. Anthony J. Appl. Phys. 89 2001 5243
- (2001) J. Appl. Phys. , vol.89 , pp. 5243
- Wilk, G.D.¹ Wallace, R.M.² Anthony, J.M.³

8
- 0037421383
- H. Kim, P.C. McIntyre, and K.C. Saraswat Appl. Phys. Lett. 82 2003 106
- (2003) Appl. Phys. Lett. , vol.82 , pp. 106
- Kim, H.¹ McIntyre, P.C.² Saraswat, K.C.³

9
- 0346534582
- G.D. Wilk, R.M. Wallace, and J.M. Anthony J. Appl. Phys. 87 2000 484
- (2000) J. Appl. Phys. , vol.87 , pp. 484
- Wilk, G.D.¹ Wallace, R.M.² Anthony, J.M.³

10
- 0034454053
- L. Manchanda, M.L. Green, R.B. van Dover, M.D. Morris, A. Kerber, Y. Hu, J.P. Han, P.J. Silverman, T.W. Sorsch, G. Weber, V. Donnelly, K. Pelhos, F. Klemens, N.A. Ciampa, A. Kornblit, Y.O. Kim, J.E. Bower, D. Barr, E. Ferry, D. Jacobson, J. Eng, B. Busch, and H. Schulte IEDM Tech. Dig. 2000 23
- (2000) IEDM Tech. Dig. , pp. 23
- Manchanda, L.¹ Green, M.L.² Van Dover, R.B.³ Morris, M.D.⁴ Kerber, A.⁵ Hu, Y.⁶ Han, J.P.⁷ Silverman, P.J.⁸ Sorsch, T.W.⁹ Weber, G.¹⁰ Donnelly, V.¹¹ Pelhos, K.¹² Klemens, F.¹³ Ciampa, N.A.¹⁴ Kornblit, A.¹⁵ Kim, Y.O.¹⁶ Bower, J.E.¹⁷ Barr, D.¹⁸ Ferry, E.¹⁹ Jacobson, D.²⁰ more..

11
- 21644446108
- S.J. Rhee, C.S. Kang, C.H. Choi, C.Y. Kang, S. Krishnan, M. Zhang, M.S. Akbar, and J.C. Lee IEDM Tech. Dig. 2004 837
- (2004) IEDM Tech. Dig. , pp. 837
- Rhee, S.J.¹ Kang, C.S.² Choi, C.H.³ Kang, C.Y.⁴ Krishnan, S.⁵ Zhang, M.⁶ Akbar, M.S.⁷ Lee, J.C.⁸

12
- 8344270283
- X. Yu, C. Zhu, M.F. Li, A. Chin, A.Y. Du, W.D. Wang, and D.L. Kwong Appl. Phys. Lett. 85 2004 2893
- (2004) Appl. Phys. Lett. , vol.85 , pp. 2893
- Yu, X.¹ Zhu, C.² Li, M.F.³ Chin, A.⁴ Du, A.Y.⁵ Wang, W.D.⁶ Kwong, D.L.⁷

13
- 33746288039
- G. Pant, A. Gnade, M.J. Kim, R.M. Wallace, B.E. Gnade, M.A. Quevedo-Lopez, P.D. Kirsch, and S. Krishnan Appl. Phys. Lett. 89 2006 032904
- (2006) Appl. Phys. Lett. , vol.89 , pp. 032904
- Pant, G.¹ Gnade, A.² Kim, M.J.³ Wallace, R.M.⁴ Gnade, B.E.⁵ Quevedo-Lopez, M.A.⁶ Kirsch, P.D.⁷ Krishnan, S.⁸

14
- 33746278810
- Y. Yamamoto, K. Kita, K. Kyuno, and A. Toriumi Appl. Phys. Lett. 89 2006 032903
- (2006) Appl. Phys. Lett. , vol.89 , pp. 032903
- Yamamoto, Y.¹ Kita, K.² Kyuno, K.³ Toriumi, A.⁴

15
- 67649980015
- C.H. An, M.S. Lee, J.Y. Choi, and H. Kim Appl. Phys. Lett. 94 2009 262901
- (2009) Appl. Phys. Lett. , vol.94 , pp. 262901
- An, C.H.¹ Lee, M.S.² Choi, J.Y.³ Kim, H.⁴

16
- 74449088069
- D. Rebiscoul, S. Favier, J.P. Barnes, J.W. Maes, and F. Martin Microelectron. Eng. 87 2010 278
- (2010) Microelectron. Eng. , vol.87 , pp. 278
- Rebiscoul, D.¹ Favier, S.² Barnes, J.P.³ Maes, J.W.⁴ Martin, F.⁵

17
- 67650504946
- C.H. Liu, H.W. Chen, S.Y. Chen, H.S. Huang, and L.W. Cheng Appl. Phys. Lett. 95 2009 012103
- (2009) Appl. Phys. Lett. , vol.95 , pp. 012103
- Liu, C.H.¹ Chen, H.W.² Chen, S.Y.³ Huang, H.S.⁴ Cheng, L.W.⁵

18
- 77956875405
- C.H. Liu, P.C. Juan, and J.Y. Lin Thin Solid Films 518 2010 7455
- (2010) Thin Solid Films , vol.518 , pp. 7455
- Liu, C.H.¹ Juan, P.C.² Lin, J.Y.³

19
- 0037096520
- X. Zhao, and D. Vanderbilt Phys. Rev. B 65 2002 233106
- (2002) Phys. Rev. B , vol.65 , pp. 233106
- Zhao, X.¹ Vanderbilt, D.²

20
- 0004009372
- Wiley New York
- F.A. Cotton, G. Wilkinson, C.A. Murillo, and M. Bochmann Advanced Inorganic Chemistry 2000 Wiley New York
- (2000) Advanced Inorganic Chemistry
- Cotton, F.A.¹ Wilkinson, G.² Murillo, C.A.³ Bochmann, M.⁴

21
- 0004152586
- Pergamon New York
- N.N. Greenwood, and A. Earnshaw Chemistry of the Elements 1984 Pergamon New York
- (1984) Chemistry of the Elements
- Greenwood, N.N.¹ Earnshaw, A.²

22
- 0037399773
- X. Wu, D. Landheer, M.J. Graham, H.W. Chen, T.Y. Huang, and T.S. Chao J. Cryst. Growth 250 2003 479
- (2003) J. Cryst. Growth , vol.250 , pp. 479
- Wu, X.¹ Landheer, D.² Graham, M.J.³ Chen, H.W.⁴ Huang, T.Y.⁵ Chao, T.S.⁶

23
- 0036567768
- P. Boher, P. Evrard, J.P. Piel, and J.L. Stehle J. Non-Cryst. Sol. 303 2002 167
- (2002) J. Non-Cryst. Sol. , vol.303 , pp. 167
- Boher, P.¹ Evrard, P.² Piel, J.P.³ Stehle, J.L.⁴

24
- 31544477427
- H. Shimizu, K. Kita, K. Kyuno, and A. Toriumi Jpn. J. Appl. Phys. 44 2005 6131
- (2005) Jpn. J. Appl. Phys. , vol.44 , pp. 6131
- Shimizu, H.¹ Kita, K.² Kyuno, K.³ Toriumi, A.⁴

25
- 43549083257
- S.Z. Chang, H.Y. Yu, C. Adelmann, A. Delabie, X.P. Wang, S.V. Elshocht, A. Akheyar, L. Nyns, J. Swerts, M. Aoulaiche, C. Kerner, P. Absil, T.Y. Hoffmann, and S. Biesemans IEEE Electron Dev. Lett. 29 2008 430
- (2008) IEEE Electron Dev. Lett. , vol.29 , pp. 430
- Chang, S.Z.¹ Yu, H.Y.² Adelmann, C.³ Delabie, A.⁴ Wang, X.P.⁵ Elshocht, S.V.⁶ Akheyar, A.⁷ Nyns, L.⁸ Swerts, J.⁹ Aoulaiche, M.¹⁰ Kerner, C.¹¹ Absil, P.¹² Hoffmann, T.Y.¹³ Biesemans, S.¹⁴

26
- 33847203949
- A.P. Huang, and P.K. Chu Appl. Phys. Lett. 90 2007 082906
- (2007) Appl. Phys. Lett. , vol.90 , pp. 082906
- Huang, A.P.¹ Chu, P.K.²

27
- 0003459529
- Perkin-Elmer Minnesota
- J.F. Moulder, W.F. Stickle, P.E. Sobol, and K.D. Bomben Handbook of X-ray Photoelectron Spectroscopy 1992 Perkin-Elmer Minnesota
- (1992) Handbook of X-ray Photoelectron Spectroscopy
- Moulder, J.F.¹ Stickle, W.F.² Sobol, P.E.³ Bomben, K.D.⁴

28
- 79956009637
- T. Gougousi, M.J. Kelly, and G.N. Parsons Appl. Phys. Lett. 80 2002 4419
- (2002) Appl. Phys. Lett. , vol.80 , pp. 4419
- Gougousi, T.¹ Kelly, M.J.² Parsons, G.N.³

29
- 33644988616
- S. Chakraborty, M.K. Bera, G.K. Dalapati, D. Paramanik, S. Varma, P.K. Bose, S. Bhattacharya, and C.K. Maiti Semicond. Sci. Technol. 21 2006 467
- (2006) Semicond. Sci. Technol. , vol.21 , pp. 467
- Chakraborty, S.¹ Bera, M.K.² Dalapati, G.K.³ Paramanik, D.⁴ Varma, S.⁵ Bose, P.K.⁶ Bhattacharya, S.⁷ Maiti, C.K.⁸

30
- 0033315071
- Y. Ma, Y. Ono, L. Stecker, D.R. Evans, and S.T. Hsu IEDM Tech. Dig. 1999 149
- (1999) IEDM Tech. Dig. , pp. 149
- Ma, Y.¹ Ono, Y.² Stecker, L.³ Evans, D.R.⁴ Hsu, S.T.⁵

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