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Applied Physics Letters

Volumn 80, Issue 23, 2002, Pages 4419-4421

The role of the OH species in high-k/polycrystalline silicon gate electrode interface reactions

(3) Gougousi, Theodosia a Kelly, M Jason a Parsons, Gregory N a

a North Carolina State University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC LAYER; DIELECTRIC SURFACE; GATE ELECTRODES; INSULATING LAYERS; POLYCRYSTALLINE SILICON (POLY-SI); POLYSILICON DEPOSITION; WATER EXPOSURE;

AMORPHOUS MATERIALS; CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYSILICON; WATER VAPOR; X RAY PHOTOELECTRON SPECTROSCOPY;

AMORPHOUS SILICON;

EID: 79956009637 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1485122 Document Type: Article

Times cited : (30)

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