Interfacial compound suppression and dielectric properties enhancement of F-N codoped Zr O2 thin films

Applied Physics Letters

Volumn 90, Issue 8, 2007, Pages

  Huang, A P ^a,b   Chu, Paul K ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b BEIHANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC PROPERTIES; DOPING (ADDITIVES); FLUORINE; HYSTERESIS; NITROGEN; SILICON; ZIRCONIA;

CATHODIC ARC DEPOSITION; CHARGE CENTERS; FLATBAND SHIFTS; INTERFACIAL STATES;

THIN FILMS;

EID: 33847203949     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2709916     Document Type: Article

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