Electrical characterization of ZrO2/Si interface properties in MOSFETs with ZrO2 gate dielectrics

IEEE Electron Device Letters

Volumn 28, Issue 1, 2007, Pages 62-64

  Liu, Chuan Hsi ^a   Chiu, Fu Chien ^a  

^a MING CHUAN UNIVERSITY   (Taiwan)

Author keywords

Gated diode; High dielectrics; ZrO2

Indexed keywords

DIELECTRIC MATERIALS; GATES (TRANSISTOR); INTERFACES (MATERIALS); SEMICONDUCTOR DIODES; ZIRCONIA;

GATED DIODE; INTERFACE TRAP DENSITY; SURFACE-RECOMBINATION VELOCITY;

MOSFET DEVICES;

EID: 33845988058     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.887626     Document Type: Article

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