Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with ZrO2 gate dielectric

Journal of Applied Physics

Volumn 101, Issue 9, 2007, Pages

  Hsu, De Cheng ^a   Wang, Ming Tsong ^a   Lee, Joseph Ya Min ^a   Juan, Pi Chun ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b MING CHI UNIVERSITY OF TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; GATE DIELECTRICS; MATHEMATICAL MODELS; MOS CAPACITORS; ZIRCONIA;

CAPACITOR AREA; FIELD ACCELERATION PARAMETERS; TIME DEPENDENT DIELECTRIC BREAKDOWN (TDDB); WEIBULL SLOPES;

MOSFET DEVICES;

EID: 34248590809     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2723861     Document Type: Conference Paper

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