Leakage current characteristics and the energy band diagram of Al/ZrO 2/Si0.3Ge0.7 hetero-MIS structures

Semiconductor Science and Technology

Volumn 21, Issue 4, 2006, Pages 467-472

  Chakraborty, S ^a   Bera, M K ^a   Dalapati, G K ^b   Paramanik, D ^c   Varma, S ^c   Bose, P K ^d   Bhattacharya, S ^e   Maiti, C K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

^b NEWCASTLE UNIVERSITY   (United Kingdom)

^c INSTITUTE OF PHYSICS   (India)

^d JADAVPUR UNIVERSITY   (India)

^e QUEEN'S UNIVERSITY BELFAST   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CHEMICAL VAPOR DEPOSITION; DEPOSITION; PLASMAS; SEMICONDUCTOR MATERIALS; THIN FILMS; ZIRCONIA;

CONDUCTION MECHANISMS; ENERGY BAND DIAGRAM; HETERO MIS STRUCTURES; HIGH TEMPERATURE; SCHOTTKY EMISSION;

LEAKAGE CURRENTS;

EID: 33644988616     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/4/009     Document Type: Article

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