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Vacuum

Volumn 80, Issue 4, 2005, Pages 310-316

Thermal treatment effects on interfacial layer formation between ZrO 2 thin films and Si substrates

(6) Choi, Hoon Sang a Seol, Kwang Soo b Kim, Do Young a Kwak, Jun Sang a Son, Chang Sik c Choi, In Hoon a

a Korea University (South Korea)

b INST OF PHYS AND CHEMICAL RESEARCH (Japan)

c Silla University (South Korea)

Author keywords

Leakage current; Silicate; Silicide; Sputtering; ZrO2

Indexed keywords

HEAT TREATMENT; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MAGNETRON SPUTTERING; OXYGEN; PARTIAL PRESSURE; SILICATES; SILICON; SPUTTERING; STOICHIOMETRY; SUBSTRATES; SURFACE STRUCTURE; THIN FILMS;

HIGH OXYGEN PARTIAL PRESSURE; INTERFACIAL STRUCTURE; SILICIDES; ZRO2;

ZIRCONIA;

EID: 26444437825 PISSN: 0042207X EISSN: None Source Type: Journal
DOI: 10.1016/j.vacuum.2005.05.004 Document Type: Article

Times cited : (18)

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